Semiconductor Component with a Monocrystalline Semiconductor Region Arranged in a Via Region

ABSTRACT

A MOS transistor semiconductor component includes a semiconductor body with first and second surfaces, a first contact electrode on the first surface, a second contact electrode on the second surface, a first insulation layer separating a via region at least from a drift region, a monocrystalline semiconductor region arranged in the via region and extending between the first surface and the second surface, a gate electrode electrically connected to the first contact electrode, a source electrode electrically insulated from the gate electrode, and arranged at least partially above the first surface, and a drain electrode electrically insulated from the second contact electrode on the second surface. The MOS transistor has a gate terminal formed by the second contact electrode and electrically connected to a gate-electrode of the MOS transistor through the via region. The gate-electrode is formed next to the first surface and disposed outside the via region.

TECHNICAL FIELD

Embodiments of the present invention relate to a method for producing asemiconductor component with an electrically conductive via extendingthrough a semiconductor body, and to a semiconductor component with avia.

BACKGROUND

There are semiconductor components or devices which include at least apart of their device structure in the region of a first surface of asemiconductor body and which include a terminal for electricallycontacting the device structure at a second surface of the semiconductorbody. Such components further include an electrically conducting viawhich extends through the semiconductor body from the terminal at thesecond surface to the first surface.

The electrically conducting via is usually electrically insulated fromsurrounding regions of the semiconductor body. A via like this can beproduced by: forming a trench, depositing an electrically insulatingmaterial at the sidewalls of the trench, and filling the remainingtrench with an electrically conductive material.

There is a need to provide a method for producing a semiconductorcomponent with an electrically conductive via extending through asemiconductor body which is properly insulated from surrounding regionsof the semiconductor body.

SUMMARY

According to an embodiment of a method for producing a semiconductorcomponent, the method includes: providing a semiconductor body with afirst surface and a second surface opposite the first surface; formingan insulation trench which extends into the semiconductor body from thefirst surface and which in a horizontal plane of the semiconductor bodydefines a via region of the semiconductor body; forming a firstinsulation layer on one or more sidewalls of the insulation trench;removing semiconductor material of the semiconductor body from thesecond surface to expose at least parts of the first insulation layer,to remove at least parts of the first insulation layer, or to leave atleast partially a semiconductor layer with a thickness of less than 1 μmbetween the first insulation layer and the second surface; forming afirst contact electrode on the via region in the region of the firstsurface; and forming a second contact electrode on the via region in theregion of the second surface.

According to an embodiment of a semiconductor component, the componentincludes: a semiconductor body with a first surface and a secondsurface; a first contact electrode in a region of the first surface; asecond contact electrode in a region of the second surface; asemiconductor via region extending between the first and second contactelectrodes; and an insulation layer separating the via region in ahorizontal direction of the semiconductor body from other regions of thesemiconductor body.

Those skilled in the art will recognize additional features andadvantages upon reading the following detailed description, and uponviewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The components in the figures are not necessarily to scale, insteademphasis being placed upon illustrating the principles of the invention.Moreover, in the figures, like reference numerals designatecorresponding parts. In the drawings:

FIGS. 1A to 1H illustrate vertical cross sections through asemiconductor body during a method according to a first embodiment forproducing a semiconductor component with a semiconductor via;

FIG. 2 illustrates a horizontal cross section through a semiconductorbody which includes a rectangular semiconductor via region;

FIG. 3 illustrates a horizontal cross section through a semiconductorbody which includes a circular semiconductor via region;

FIG. 4 illustrates a horizontal cross section through a semiconductorbody which includes a ring-shaped semiconductor via region;

FIGS. 5A to 5C illustrate vertical cross sections through asemiconductor body during method steps of a method according to a secondembodiment;

FIG. 6 illustrates a vertical cross section through the semiconductorcomponent after process steps of a method according to a furtherembodiment;

FIGS. 7A to 7E illustrate vertical cross sections through asemiconductor body during method steps of a method which, besides asemiconductor via, produces a further via in the semiconductor viaregion;

FIG. 8 illustrates a vertical cross section through a semiconductorcomponent produced in accordance with a modification of the methodaccording to FIG. 7;

FIG. 9 illustrates a vertical cross section through a transistorcomponent which includes a semiconductor via;

FIG. 10 illustrates a top view on one surface of a transistor componentaccording to a first embodiment;

FIG. 11 illustrates a top view on one surface of a transistor componentaccording to a second embodiment;

FIG. 12 illustrates a top view on one surface of a transistor componentaccording to a third embodiment;

FIG. 13 illustrates a top view on one surface of a semiconductor body inwhich two transistor components, each including a semiconductor via, areintegrated;

FIG. 14 illustrates a second embodiment of a semiconductor arrangementin which two transistor components, each including a semiconductor via,are integrated;

FIG. 15 illustrates a vertical cross-section through the componentaccording to FIG. 14 in a section plane C-C;

FIG. 16 illustrates a part of a vertical cross-section through asemiconductor body in which two transistor components are integrated;

FIG. 17 illustrates a horizontal cross-section through the arrangementof FIG. 16;

FIG. 18 illustrates a horizontal cross-section through a semiconductorbody according to a further embodiment in which two transistorcomponents are integrated.

DETAILED DESCRIPTION

FIGS. 1A to 1H illustrate a first embodiment of a method for producing asemiconductor component with an electrically conductive via extendingthrough a semiconductor body. These figures show vertical cross-sectionsthrough a semiconductor body during or after particular method steps.

Referring to FIG. 1A, the semiconductor body 100 is provided. Thesemiconductor body 100 includes a first surface 101 and a second surface102 opposite the first surface 101. The vertical cross-sectionsillustrated in FIGS. 1A to 1H are cross-sections in a vertical sectionplane which is perpendicular to the first and second surfaces 101, 102.

The semiconductor body 100 can comprise a conventional semiconductormaterial, e.g. silicon (Si), silicon carbide (SiC), gallium arsenide(GaAs), gallium nitride (GaN), etc. The semiconductor body 100 is, inparticular, a monocrystalline semiconductor body.

According to a first embodiment, the semiconductor body 100 has ahomogeneous basic doping. Dependent on the specific type of thesemiconductor component which is to be implemented, the basic doping canbe an n-doping or a p-doping. According to a further embodiment, thesemiconductor body 100 includes two differently doped semiconductorlayers: a first semiconductor layer 110; and a second semiconductorlayer 120 on top of the first semiconductor layer 110. The firstsemiconductor layer 110 is, for example, a semiconductor substrate, andthe second semiconductor layer 120 is, for example, an epitaxial layergrown on the substrate 110. The two semiconductor layers 110, 120 canhave different doping concentrations and/or doping types. According toone embodiment, the first layer 110 has a higher doping concentrationthan the second layer 120. The doping concentration of the first layer110 is, for example, in the range of between 10¹⁸ cm⁻³and 10²¹ cm⁻³whilethe doping concentration of the second layer 120 is, for example, in therange of between 10¹⁴ cm⁻³and 10¹⁷ cm⁻³. The doping types of the dopingsof the first and second layers 110, 120 can be identical or can becomplementary.

Referring to FIG. 1B, at least one insulation trench is formed whichextends into the semiconductor body 100 from the first surface 101. In ahorizontal plane of the semiconductor body 100, the at least oneinsulation trench 103 forms a closed loop or ring such that the at leastone insulation trench 103 encloses a region 11 of the semiconductor body100. The region 11 enclosed by the insulation trench 103 in thehorizontal direction of the semiconductor body 100 will be referred toas a via region in the following. In the horizontal plane, theinsulation trench 103 can be implemented in many different ways, i.e.with many different geometries. For illustration purposes, some exampleswill be explained with reference to embodiments illustrated in FIGS. 2to 4.

FIG. 2 shows a top view on the semiconductor body 100 after forming theinsulation trench 103. In the embodiment illustrated in FIG. 2, theinsulation trench 103 has a rectangular geometry. In this case, theinsulation trench 103 is implemented as a rectangular ring or loop in ahorizontal plane of the semiconductor body 100. Consequently, thesemiconductor via region 11 enclosed by the insulation trench 103 isrectangular in the horizontal plane.

In the embodiment illustrated in FIG. 3, the insulation trench 103 hasan ellipsoidal and, specifically, a circular geometry. Consequently, thesemiconductor via region 11 enclosed by the insulation trench 103 has anellipsoidal and, specifically, a circular geometry.

In the embodiments illustrated in FIGS. 2 and 3 the semiconductor viaregion 11 is defined by one insulation trench 103 which encloses thesemiconductor via region 11. However, an insulation trench 103 with arectangular geometry (see FIG. 2) or an ellipsoidal geometry (see FIG.3) are only exemplary embodiments. The insulation trench 103 can haveany other geometry, provided that the insulation trench 103 forms aclosed loop or ring enclosing the semiconductor via region 11.

According to a further embodiment which is illustrated in FIG. 4, thesemiconductor via region 11 is enclosed by two insulation trenches eachof which forms a closed loop: a first insulation trench 103 ₁, and asecond insulation trench 103 ₂ arranged within the loop defined by thefirst trench 103 ₁. The first and the second trenches 103 ₁, 103 ₂ arespaced apart from one another so that the semiconductor via region 11 isdisposed between the two trenches 103 ₁, 103 ₂. In the embodimentillustrated in FIG. 4, the first and second trenches 103 ₁, 103 ₂basically have a rectangular geometry. However, this is only an example.These two trenches 103 ₁, 103 ₂ may have any other closed-loop geometryother than a rectangular geometry as well.

In the embodiments illustrated in FIGS. 2, 3 and 4, the trench 103 (inthe horizontal plane) forms a closed loop which surrounds asemiconductor region, wherein the semiconductor region surrounded by thetrench forms the via region 11. The trench with the closed-loop geometryseparates the via region 11 in the horizontal direction from otherregions of the semiconductor body 100. However, it is not necessary forthe trench 103 to have a closed-loop geometry in order to define the viaregion 11. If, for example, the trench 103 is arranged close to an edgeof the semiconductor body 100 and terminates at the edge of thesemiconductor body 100, a closed-loop geometry is not required. This isillustrated in dashed lines in FIG. 2. In this Figure, reference numeral105 denotes an edge of the semiconductor body 100 at which thesemiconductor body 100 terminates.

A trench 103′ (illustrated in dashed lines) terminates at the edge 105and forms a closed loop with the edge so that the trench (together withthe edge 105 of the semiconductor body) defines the via region 11. Inthis connection it should be noted that usually a plurality ofsemiconductor bodies which are part of a semiconductor wafer (not shown)are processed together, and the wafer is separated to form theindividual semiconductor bodies at the end of such processing. Thus,when the trenches 103 or 103′, respectively, are formed, the wafer hasnot yet been separated. At this time, lines (scribe lines) on the waferdefine where the wafer is to be separated and, therefore, define wherethe edges of the individual wafers will be. At this time of processing,the trench 103′ and the scribe line define the via region 11. The trench103′ can also be formed with a closed-loop geometry such that the trench103′ extends into the scribe line. In this case, the closed loop definedby this trench 103′ is “opened” when the wafer is cut into theindividual semiconductor bodies (dies) by cutting along the scribelines.

In the embodiments drawn in solid lines of FIGS. 2 and 3 the trenches103 define a silicon via 11 which is enclosed by the trench. Outside theclosed-loop defined by the trench active component region, like activeregions of a transistor can be arranged. In the embodiments of FIGS. 2and 3, the area of the semiconductor body 100 enclosed by the trench isselected such that a via with a suitable/desired ohmic resistance isobtained. According to a further embodiment, active component regionsare arranged in the semiconductor area enclosed by the trench 103 andthe via is defined by the trench and the edge 105 of the semiconductorbody 100. In this case, the via 11 (as shown in dotted lines in FIGS. 2and 3) is arranged between the edge 105 and the trench 103 and forms aclosed loop which encloses the trench 103, with the trench 103 forming aclosed loop that encloses the active regions, like e.g., a field oftransistor cells.

FIG. 1B represents a vertical cross-section through each of theembodiments illustrated in FIGS. 2, 3 and 4. In FIG. 1B, the referencesigns in parentheses represent the reference signs for the embodimentaccording to FIG. 4. In the following “at least one insulation trench”means either one trench 103 as illustrated in FIGS. 2 and 3, or twotrenches 103 ₁, 103 ₂ as illustrated in FIG. 4.

The at least one insulation trench 103, which extends in a verticaldirection of the semiconductor body 100, can be produced using anetching method. Etching methods for producing a vertical trench in asemiconductor body are commonly known, so that no further explanation isrequired in this regard. “To extend in a vertical direction” means thatthe at least one trench 103 generally extends in the vertical direction.However, the trench can also be inclined relative to the first surface101, so that an angle between sidewalls of the trench 103 and the firstsurface 101 can be different from 90°. The trench width can decrease orcan increase with depth. Both sidewalls can also be tilted toward thesame direction with the trench width being e.g. constant over the trenchdepth. The direction in which the trenches 103 are tilted can, forexample, vary over the wafer.

The at least one insulation trench 103 is produced such that it does notcompletely extend through the semiconductor body 100 to the secondsurface 102. A depth of the insulation trench 103 is, for example, inthe range of between 5 μm and 200 μm, in particular between 30 μm and 60μm, like about 50 μm. A width of the trench is, for example, in therange of between 200 nm and 20 μm.

Referring to FIG. 1C, a first insulation layer 21 is formed at least onthe sidewalls of the at least one insulation trench 103. In theembodiment illustrated in FIG. 1C, the first insulation layer 21 isformed on the sidewalls and on the bottom of the at least one insulationtrench 103. The first insulation layer 21 is, for example, an oxidelayer. The oxide layer can be produced by a thermal oxidation processand/or by a deposition process. The method, however, is not restrictedto the use of an oxide as the insulation layer 21. Any other type ofinsulation or dielectric material may be used as well, like a nitride,aluminum oxide (Al₂O₃) or a low-k-dielectric. According to oneembodiment, the first insulation layer 21 is a composite layer whichincludes two or more layers of an insulation material arranged one abovethe other.

Optionally, a doped semiconductor region 12 (illustrated in dashedlines) is produced in the semiconductor body 100 adjacent the insulationtrench 103. The doped semiconductor region 12 has a higher dopingconcentration than the basic doping of the semiconductor body 100 or,when the semiconductor body 100 includes a higher doped first layer 110and a lower doped second layer 120, has a doping concentration which isat least higher than the doping concentration of the lower dopedsemiconductor layer 120. The doped semiconductor region 12 is producedadjacent to the trench 103 at least in the via region 11, but can alsobe produced along the complete side walls and the bottom of theinsulation trench 103. Forming the higher doped region 12 includes, forexample: a deposition process, in which a doped glass or dopedpolysilicon is deposited, followed by a diffusion process; a gas phasedoping process; or an implantation and/or diffusion process in whichdopant atoms are implanted or diffused via the sidewalls (and optionallythe bottom) of the insulation trench 103 into the semiconductor body100.

In the embodiment illustrated in FIG. 1C the insulation layer 21 isproduced along the sidewalls and the bottom of the insulation trench 103such that a residual trench remains after the insulation layer 21 hasbeen produced. Referring to FIG. 1D, this residual trench is filled witha filling material 22. The filling material 22 is, for example, anelectrically conductive material, like a doped amorphous orpolycrystalline semiconductor material, such as polysilicon, a metal,silicide or carbon. According to a further embodiment, the fillingmaterial 22 is an insulating material, so that the insulation trench 21is completely filled with an insulation material. According to a furtherembodiment, which is illustrated in FIG. 6, the insulation layer 21 isproduced such that it completely fills the insulation trench 103, sothat there is no residual trench after the insulation layer 21 has beenproduced. In further embodiments a void may be enclosed in the trench103 if, e.g., the opening of the trench 103 is closed during depositionbefore the trench 103 has been completely filled.

The insulation and filling materials are typically also deposited on thefirst surface 101 (e.g. on the trench etch mask) and second surface 102,which is not shown in FIG. 1C. After trench filling, these layers can beremoved from the first and second surfaces 101, 102.

Referring to FIG. 1E, semiconductor material is removed from the secondsurface 102, so that a thickness—which corresponds to a verticaldimension of the semiconductor body 100—is reduced. For example, theremoval of the semiconductor material at the second surface 102 includesat least one of an etching process, a mechanical polishing process, or achemical-mechanical polishing (CMP) process. In FIG. 1E, referencecharacter 102′ denotes the second surface of the semiconductor body 100after the removal process. It should be mentioned that the semiconductorbody is usually flipped or turned upside after having finishedprocessing the first surface and before processing the second surface.However, for a better understanding such flipping of the semiconductorbody 100 is not illustrated.

Referring to the embodiment illustrated in FIG. 1E, the removal processcan be performed such that at the end of the removal process the firstinsulation layer 21 is uncovered at the second surface 102′. In theembodiment illustrated, the semiconductor material is removed down tobelow the bottom of the insulation trench 103, so that at the end of theremoval process the first insulation layer 21 at the bottom of theinsulation trench is uncovered at the second surfaces and protrudes fromthe second surface 102′. Thus, the second surface is not planarized inthis method.

In next method steps, a second insulation layer 31 is formed on thesecond surface 102′, with the second insulation layer 31 covering theuncovered region of the first insulation layer 21. Referring to FIGS. 1Fand 1G, producing the second insulation layer 31 includes, for example,forming an insulation layer 31′ which completely covers the secondsurface 102′ (see FIG. 1F) and forming a contact opening in theinsulation layer 31′, with the contact opening extending to the viaregion 11. The contact opening is produced such that remaining sections31 of the insulation layer 31′ form the second insulation layer 31 whichcovers the at least one insulation trench 103 with the first insulationlayer 21 at the second surface 102′. The second insulation layer 31 is,for example, an oxide layer or a nitride layer. The second layer 31includes, in particular, a material which does not require hightemperatures, like temperatures below 400° C., in the depositionprocess. Further suitable materials are, e.g., a spin-on glass or animide. Before removing semiconductor material at the second surface 102,the device structures at and below the first surface can be finished orfinally processed. This may include the deposition of metallizationlayers (not shown) on the first surface 101. Such metallization layers,however, cannot withstand high temperatures, like temperatures above400° C.

Forming the second insulation layer 31 is optional. The insulation layer21 at the bottom of the trenches can be sufficient to insulate the viaregion from surrounding semiconductor regions at the bottom of thetrench.

For forming the second insulation layer 31, which adjoins the firstinsulation layer 21, it is not necessary to uncover the first insulationlayer 21 in the removal process illustrated in FIG. 1E. According to analternative embodiment, the semiconductor material is not removed downto the first insulation layer 21, but a (thin) layer of semiconductormaterial having a thickness of less than 1 μm remains below the firstinsulation layer 21 in the region of the second surface 102′. This isillustrated in dotted lines in FIG. 1E. In this case, forming theinsulation layer 31′ (see FIG. 1F) involves a process which transformsthe semiconductor layer between the second surface 102′ and the firstinsulation layer 21 into an insulation layer. Such a process is, forexample, an oxidation process, like an anodic oxidation process, and/ora process in which oxygen is implanted into the semiconductor body 100via the second surface 102′.

After the process steps illustrated in FIGS. 1E to 1G, the semiconductorvia region 11 in a horizontal direction is completely enclosed by theinsulation trench with the first insulation layer 21 and by the secondinsulation layer 31. The semiconductor via region 21 forms anelectrically conductive connection between the first surface 101 and thesecond surface 102′ of the semiconductor body 100, and is electricallyinsulated from other regions of the semiconductor body 100.

Referring to FIG. 1H a first contact electrode 41 is formed on thesemiconductor via region 11 in the region of the first surface 101 and asecond contact electrode 42 is formed on the semiconductor via region 11in the region of the second surface 102′. To form the first and secondcontact electrodes 41, 42 in the region of the first and second surfaces101, 102, respectively, means that these electrodes 41, 42 can be formedon the respective surfaces 101, 102. However one or both of thesetrenches could also be formed in trenches, wherein each of thesestrenches extends from one of the surfaces 101, 102 into the via regionand includes one of the first and second electrodes 41, 42 contactingthe via region within the respective trench.

The first contact electrode 41 is, for example, a metal, a silicide, ora highly doped polycrystalline semiconductor material, such aspolysilicon. Optionally, a doped contact region 13 is formed in the viaregion 11 below the first surface 101 before forming the first contactelectrode 41. Such contact region can also be formed below the secondsurface 102′ before forming the second contact electrode 42. However,such contact region can be omitted, when the semiconductor body has ahigh basic doping, like in the region of the higher doped firstsemiconductor layer 110.

Although the method steps for producing the semiconductor via 11 withthe first and second contact electrodes 41, 42 have been illustrated ina certain order, the method is not restricted to perform theses steps inany particular order. Rather, the order of method steps can be changed.For example, the first contact electrode 41 on the first surface 101 andthe optional contact region 13 can be produced before the removalprocess, or even before producing the insulation trench 103.

FIGS. 5A to 5C illustrate a further embodiment for producing asemiconductor via 11 in a semiconductor body 100. This method isbasically equivalent to the method illustrated in FIGS. 1A to 1H withthe difference that the second surface 102′ is planarized at the end ofor during the removal process so that the first insulation layer 21 inthe bottom region of the insulation trench 103 is removed. FIG. 5Aillustrates a vertical cross-section through the semiconductor body 100after these method steps. After these method steps the first insulationlayer 21 is present on opposite sidewalls of the insulation trench 103and a filling material 22 is uncovered at the second surface 102′.Referring to the explanation provided herein above, the filling material22 is optional. As such, the insulation trench 103 can be completelyfilled with the first insulation layer 21.

The method steps illustrated in FIGS. 5B and 5C for forming the secondinsulation layer 31 on the second surface 102′, and for forming thefirst and second contact electrodes 41, 42 correspond to the methodsteps illustrated in FIGS. 1F to 1H to which reference is made,respectively. The second insulation layer 31 covers the insulationtrench 103 at the second surface 102′ and leaves a contact opening abovethe semiconductor via region 11.

Referring to the explanation provided hereinabove, the first insulationtrench 103 can be filled completely with the first insulation layer 21,where the first insulation layer 21 may also be produced as a stack ofdifferent material layers and may contain voids. A verticalcross-section through the semiconductor body 100 having the insulationtrench 103 filled completely with the first insulation layer 21 isillustrated in FIG. 6. FIG. 6 shows a vertical cross section through thesemiconductor body 100 before removing semiconductor material from thesecond surface 102 and before producing the first and second contactelectrodes 41, 42.

The ohmic resistance of the semiconductor via region 11 between thefirst and second contact electrodes 41, 42 is, amongst others, dependenton the length of the via region 11, with the length corresponding to thevertical thickness of the semiconductor body 100, the area of thehorizontal cross-section of the semiconductor via region 11, and thedoping concentration of the via region 11. The ohmic resistance of thesemiconductor via region 11 can be reduced by providing the higher dopedregions 12 along the sidewalls of the insulation trench 103.

According to a further embodiment, the ohmic resistance of thesemiconductor via region 11 can be reduced by additionally providing acontact trench filled with an electrically conductive material withinthe semiconductor via region 11. Such contact trench can be providedoptionally or additionally to the higher doped semiconductor region 12.An embodiment of a method for producing a semiconductor via region 11with a contact trench is explained next with reference to FIGS. 7A to7E. These figures each show a vertical cross section through thesemiconductor body 100 during particular steps of the method. Althoughthese method steps are illustrated in a certain order in the figures,this order can be changed.

Referring to FIG. 7A this method involves, besides forming theinsulation trench 103 and filling the insulation trench 103, forming acontact trench 104 which extends from the first surface 101 into thesemiconductor body, and filling the contact trench 104 with anelectrically conductive material 23. The electrically conductivematerial 23 is, for example, a doped amorphous or polycrystallinesemiconductor material, such as polysilicon, a metal, a silicide, orcarbon. According to one embodiment, the contact trench 104 is filledwith a layer stack which includes at least two different electricallyconductive layers. Optionally a diffusion barrier or a third insulationlayer 24 is formed along the sidewalls of the contact trench 104 beforefilling the trench 104 with the electrically conductive material 23. Theelectrically conductive material 23 forms a conductive via within thesemiconductor via region 11. The contact trench 104 can be produced suchthat it is arranged distant to the insulation trench 103. The positionof the contact trench 104 within the semiconductor via region 11 isillustrated in dashed lines in the embodiments illustrated in FIGS. 2, 3and 4.

The insulation trenches can include the first insulation layer 21 and anelectrically conductive filling material 22, as illustrated in FIG. 7A.Alternatively, the insulation trench 103 can be completely filled withthe first insulation layer 21 as illustrated in FIG. 6.

The remaining method steps illustrated in FIGS. 7B to 7E correspond tothe method steps illustrated in FIGS. 1E to 1H, respectively. Thesemethod steps include partially removing the semiconductor body 100 atthe second surface 102 (see FIG. 7B), forming the second insulationlayer 31 adjacent to the first insulation layer 21 (see FIGS. 7C and7D). The contact opening in the insulation layer 31′ is formed such thatthe contact opening uncovers the contact via 23 at the second surface102′. Referring to FIG. 7E, the first and second contact electrodes 41,42 are formed on the contact via 23 and the semiconductor via 11 on thefirst surface 101 and on the second surface 102, respectively.

Forming the insulation trench 103 and the contact trench 104 may includecommon method steps. According to one embodiment these trenches 103, 104are etched by the same etching process. Further, when the fillingmaterial 22 of the insulation trenches 103 is an electrically conductivematerial, the filling material 22 in the insulation trenches 103 and theelectrically conductive material 23 in the contact trench 104 can beproduced by the same method steps.

In the method illustrated in FIGS. 7A to 7E, the first insulation layer21 at the bottom of the insulation trench 103 is preserved during theprocess of partially removing the semiconductor body 100 at the secondsurface 102. This is in correspondence with the method illustrated inFIGS. 1A to 1H.

According to one embodiment, the contact trench 104 is produced toextend deeper into the semiconductor body 100 from the first surface 101than the insulation trenches 103. A deeper contact trench 104 can beproduced using the same process that produces the insulation trenches103 when the contact trench 104 is wider than the insulation trenches103. After the contact trench 104 is filled with the electricallyconductive material 23, and when the semiconductor material is removedfrom the second surface 102, the contact electrode 23 in the (deeper)contact trench 104 is uncovered before the insulation trenches 103 arereached. This allows to uncover the contact electrode 23 at the secondsurface 102′ without removing the insulation layer 21 at the bottom ofthe insulation trenches 103.

However, similarly to the method illustrated in FIGS. 5A to 5C, thefirst insulation layer 21 can be partially removed at the bottom of theinsulation trench 103 during the removal process, so that the fillingmaterial 22 is uncovered at the bottom of the trench 103, if there is afilling material 22 besides the first insulation layer 22. Asemiconductor component produced in accordance with this modification isillustrated in FIG. 8.

The semiconductor via region 11 and the optional contact via 23 can beused to connect any type of component region or device structure whichis arranged in the region of the first surface 101 of the semiconductorbody 100 with the second contact electrode 42 at the second surface102′. FIG. 9 illustrates a vertical cross-section through a transistor,specifically a vertical MOS transistor. The MOS transistor isimplemented in a semiconductor body 100 which includes a highly dopedfirst semiconductor layer 110 and a lower doped second semiconductorlayer 120. The MOS transistor includes a drain region 54 which isimplemented by the first semiconductor layer 110 and which is contactedby a drain electrode 56 arranged on the second surface 102′. The drainelectrode 56 forms a drain terminal D of the MOS transistor. The MOStransistor further includes a drift region 53 adjacent the drain region54. The drift region 53 is formed by those sections of the firstsemiconductor layer 120 which have a basic doping of the second layer120. The transistor further includes at least one transistor cell with asource region 51, a body region 52 arranged between the source region 52and the drift region 53, and a gate electrode 61 arranged adjacent thebody region 52 and dielectrically insulated from the body region 52 by agate dielectric 62.

In FIG. 9, several transistor cells with a source region 51 and a bodyregion 52 are illustrated. In the embodiment illustrated in FIG. 9, thegate electrode 61 is implemented as a trench-gate-electrode, which is agate electrode arranged in a trench and extending from the first surface101 into the semiconductor body 100. Implementing the gate electrode 61as a trench-electrode, however, is only an example. The gate electrode61 could also be implemented as a planar electrode, which is anelectrode arranged above the first surface 101 of the semiconductor body100. In FIG. 9, different sections of the gate electrode 61 are shown.These sections of the gate electrode 61 are electrically connected witheach other in a manner not illustrated. For example, the gate electrode61 has a grid-shaped geometry in the horizontal plane. Or, theindividual sections 61 illustrated in FIG. 9 in a directionperpendicular to the section plane illustrated in FIG. 9 arelongitudinal electrode sections. These longitudinal gate electrodesections can be electrically connected with each other by a connectionarranged in a trench (not shown) which extends perpendicular to the gateelectrode sections 61.

The gate electrode 61 is electrically connected to the first contactelectrode 41, with the first contact electrode 41 dielectricallyinsulated by an insulation layer 71 from regions of the semiconductorbody 100 which are outside the via region 11, and optionally from thetrench filling material 22. Via the contact electrode 41 and thesemiconductor via 11 the gate electrode 61 is electrically connected tothe second contact electrode 42 arranged on the second surface 102′.

Thus, a gate terminal G of the MOS-transistor is formed by the secondcontact electrode 42 arranged on the second surface 102′ of thesemiconductor body. The individual source regions 51 and the bodyregions 52 are electrically connected to a source electrode 55 which isdielectrically insulated from the gate electrode 61. The sourceelectrode 55 is arranged on top of the first surface 101 of thesemiconductor body. This vertical MOS transistor has its sourceelectrode 55 above the first surface 101, and has its gate electrode 42and its drain electrode 56 arranged on the second surface 102′ of thesemiconductor body.

The source electrode 55 is electrically connected to an electrode layer57, like a metallization layer, which is arranged above the sourceelectrode 55 and the gate contact electrode 41 and which isdielectrically insulated from the gate contact electrode 41 by a furtherdielectric layer 72. The electrode layer 57 forms an outer sourceelectrode which, by virtue of its planar surface, can be mounted to aleadframe (not shown).

Alternatively a single layer metallization with a predominantly flatsurface can be used and the gate contact electrode 41 can be made from adifferent material like highly doped polysilicon.

In this connection it should be mentioned that before producing the gateelectrode 42 and the drain electrode 56 on the second surface 102′contact implantations can be made, which are implantations which serveto reduce the ohmic resistance between the via region 11 and the gateelectrode 42 and between the drain region 54 and the drain electrode 56.

In the embodiment illustrated in FIG. 9, the drain region 54 is formedby a highly doped semiconductor layer 110, like a substrate, on which alower doped layer 120, like an epitaxial layer, in which the driftregion 53 is implemented is arranged. According to a further embodiment,the semiconductor body 100 has a basic doping which corresponds to thedoping of the drift region 53. In this case, the drain region 54—and anoptional field stop region in an IGBT—are formed by an implantationand/or diffusion and/or annealing process before producing the drainelectrode 56. In this case, the vertical thickness of the semiconductorbody 100 defines the length of the drift region 53.

Referring to FIG. 9, a passivation layer 73 can be formed on the secondsurface 102′ or on the second insulation layer 31 (if a secondinsulation layer has been produced). The passivation layer 73 hascontact openings above the gate electrode 41 and the drain electrode 56.As such, the gate electrode 42 and the drain electrode can be producedwith the same method steps or can be part of one structuredmetallization layer.

The MOS transistor can be implemented as an n-type transistor or ap-type transistor. In an n-type transistor the source region 51 and thedrift region 53 are n-doped, while the body region 52 region is p-doped.In a p-type transistor the source region 51 and the drift region 53 arep-doped, while the body region 52 is n-doped. The MOS-transistor can beimplemented as a MOSFET or as an IGBT. In a MOSFET the drain region 54has the same doping type as the source region 51, and in an IGBT thedrain region 54 (which is also referred to as collector region) has adoping type which is complementary to the doping type of the sourceregion 51.

The second contact electrode or gate electrode 42 and the drainelectrode 56 can be arranged in many different ways on the secondsurface 102′ of the semiconductor body 100. Three different embodimentsare explained next with reference to FIGS. 10 to 12 each of which showsa horizontal cross-section through the second contact electrode 42 andthe drain electrode 56 in a horizontal section plane B-B illustrated inFIG. 9.

In the embodiment illustrated in FIG. 10, the drain electrode 56 and thegate electrode 52 are arranged next to each other, with the drain region56 having a cut-out region in which the gate electrode 42 is arranged.The drain electrode 56 and the gate electrode 42 are electricallyinsulated from one another by the second insulation layer 31 and/orinsulation layer 21.

In the embodiment illustrated in FIG. 11, the gate electrode 42 issurrounded by the drain electrode 56, with the gate electrode 42 and thedrain electrode 56 being electrically insulated from one another by thesecond insulation layer 31.

In the embodiment illustrated in FIG. 12, the gate electrode 42surrounds the drain electrode 56, with these two electrodes 42, 56 beingelectrically insulated from one another by the second insulation layer31 and/or insulation layer 21. In the embodiment according to FIG. 12the gate electrode 42, like the semiconductor via region 11, has aring-shaped geometry.

In other embodiments gate electrode 42 and via region 11 have differentshapes. The drain electrode 56 can overlap with the via region 11. Thisrequires however an insulation region between the gate electrode 42 andthe drain regions as well as between the drain electrode 56 and the viaregion 11.

Two MOS-transistors can be implemented in a single semiconductor body.FIGS. 13 and 14 show horizontal cross-sections through gate electrodesand drain electrodes of two MOS-transistors implemented in onesemiconductor body 100. In the embodiment illustrated in FIG. 13, afirst gate electrode 42 ₁ and a first drain electrode 56 ₁ of a firstMOS transistor are arranged next to each other and electricallyinsulated from one another by a second insulation layer 31 ₁. Further, asecond gate electrode 42 ₂ and a second drain electrode 56 ₂ of a secondMOS transistor are arranged next to each other and electricallyinsulated from one another by a second insulation layer 31 ₂. Inaddition one or more insulation trenches 103 can be provided between thedrain electrodes 56 ₁ and 56 ₂ or surrounding one or bothMOS-transistors to laterally insulate the drain and source potentialsfrom one another. The source regions can be connected to a common sourceelectrode or to electrically insulated source electrodes. Thus commonsource or common drain devices can be realized.

In the embodiment illustrated in FIG. 14, a first drain electrode 56 ₁is surrounded by a first gate electrode 42 ₁ and a second drainelectrode 56 ₂ surrounded by a second gate electrode 42 ₂, with thefirst and second gate electrodes 42 ₁, 42 ₂ being arranged distant fromone another in a horizontal direction of the semiconductor body.

FIG. 15 illustrates a vertical cross-section through the semiconductorbody 100 of FIG. 14 in a vertical section plane C-C. In this verticalcross-section section of the first and second gate electrodes 42 ₁, 42₂, of the corresponding first contact electrodes 42 ₁, 42 ₂, and thesemiconductor via regions 11 ₁, 11 ₂ are shown. Reference numerals 21 ₁and 21 ₂ denote respective first insulation layers. In the embodimentillustrated in FIG. 15 the insulation trenches are completely filledwith the first insulation layers 21 ₁, 21 ₂. However, this is only anexample. These insulation trenches could also be implemented to befilled with the first insulation layer and a filling material e.g. asshown in FIG. 1D.

The first and second semiconductor vias 11 ₁, 11 ₂ illustrated in FIG.15 are each produced (defined) by two insulation trenches 103 ₁₁, 103 ₁₂and 103 ₂₁, 103 ₂₂, respectively. In a horizontal direction the firstand second vias 11 ₁, 11 ₂ are separated from one another by two firstinsulation layers 21 ₁, 21 ₂ and a semiconductor region 13 arrangedbetween the two first insulation layers 21 ₁, 21 ₂.

FIG. 16 illustrates a further embodiment, in which the two semiconductorvia regions 11 ₁, 11 ₂ are only separated by one insulation trench witha first insulation layer 21 ₁₂. In this embodiment, the insulationtrench between the semiconductor vias 11 ₁, 11 ₂ is completely filledwith the insulation layer 21 ₁₂. However, this is only an example, thisinsulation trench could also be filled with the first insulation layer21 ₁₂ and an additional filling material e.g. as shown in FIG. 1D. FIG.17 illustrates a horizontal cross-section through the arrangementaccording to FIG. 16 in a horizontal section plane D-D.

FIG. 18 illustrates a further embodiment of a transistor arrangementwith two MOS-transistors integrated in a semiconductor body 100. FIG. 18illustrates a horizontal cross-section in a horizontal section planethrough the gate electrode and the drain electrode. In this embodimentbetween the semiconductor via regions 11 ₁ and 11 ₂ a semiconductorregion 13 is arranged, and between the semiconductor via regions 11 ₁,11 ₂ and the drain electrodes or drain regions 54 ₁, 54 ₂ additionalsemiconductor regions 14 ₁, 14 ₂ are arranged, with the additionalsemiconductor regions 14 ₁, 14 ₂ being insulated from the drain regions54 ₁, 54 ₂ by additional insulation trenches formed in correspondencewith the insulation trenches 103 ₁, 103 ₂. These additional insulationtrenches are filled with additional insulation layers 24 ₁, 24 ₂.Optionally, these additional insulation trenches are filled with theadditional insulation layers 24 ₁, 24 ₂ and a filling material, like theinsulation trenches 103 illustrated in FIG. 1D. In this embodiment, theadditional semiconductor regions 14 ₁, 14 ₂ separate the via regions 11₁, 11 ₂ from the drain regions.

According to one embodiment, the semiconductor region 13 and thesemiconductor regions 14 are connected to terminals for a definedelectrical potential, such as ground or source potential, wherein sourcepotential is the electrical potential of the source electrode 55.Thereby the capacitive coupling between the gates of the two transistorsor between gate and drain of one transistor is significantly reduced.

Although various exemplary embodiments of the invention have beendisclosed, it will be apparent to those skilled in the art that variouschanges and modifications can be made which will achieve some of theadvantages of the invention without departing from the spirit and scopeof the invention. It will be obvious to those reasonably skilled in theart that other components performing the same functions may be suitablysubstituted. It should be mentioned that features explained withreference to a specific figure may be combined with features of otherfigures, even in those cases in which this has not explicitly beenmentioned. Further, the methods of the invention may be achieved ineither all software implementations, using the appropriate processorinstructions, or in hybrid implementations that utilize a combination ofhardware logic and software logic to achieve the same results. Suchmodifications to the inventive concept are intended to be covered by theappended claims.

Spatially relative terms such as “under”, “below”, “lower”, “over”,“upper” and the like, are used for ease of description to explain thepositioning of one element relative to a second element. These terms areintended to encompass different orientations of the device in additionto different orientations than those depicted in the figures. Further,terms such as “first”, “second”, and the like, are also used to describevarious elements, regions, sections, etc. and are also not intended tobe limiting. Like terms refer to like elements throughout thedescription.

As used herein, the terms “having”, “containing”, “including”,“comprising” and the like are open ended terms that indicate thepresence of stated elements or features, but do not preclude additionalelements or features. The articles “a”, “an” and “the” are intended toinclude the plural as well as the singular, unless the context clearlyindicates otherwise.

With the above range of variations and applications in mind, it shouldbe understood that the present invention is not limited by the foregoingdescription, nor is it limited by the accompanying drawings. Instead,the present invention is limited only by the following claims and theirlegal equivalents.

What is claimed is:
 1. A semiconductor component, implemented as a MOStransistor, the semiconductor component comprising: a semiconductor bodywith a first surface and a second surface; a first contact electrode onthe first surface; a second contact electrode on the second surface; afirst insulation layer separating a via region at least from a driftregion; a monocrystalline semiconductor region arranged in the viaregion and extending between the first surface and the second surface; agate electrode electrically connected to the first contact electrode; asource electrode electrically insulated from the gate electrode, andarranged at least partially above the first surface; and a drainelectrode electrically insulated from the second contact electrode onthe second surface, wherein the MOS transistor comprises a gate terminalformed by the second contact electrode, wherein the gate terminal iselectrically connected to a gate-electrode of the MOS transistor throughthe via region, wherein the gate-electrode of the MOS transistor isformed next to the first surface and disposed outside of the via region.2. The semiconductor component of claim 1, wherein the first insulationlayer forms a closed loop in a horizontal plane parallel to the firstsurface of the semiconductor body, and wherein the closed loop enclosesthe via region.
 3. The semiconductor component of claim 2, wherein theclosed loop has a rectangular or ellipsoidal geometry in the horizontalplane.
 4. The semiconductor component of claim 1, wherein the firstinsulation layer together with an edge of the semiconductor body forms aclosed loop in a horizontal plane of the semiconductor body parallel tothe first surface, and wherein the closed loop encloses the via region.5. The semiconductor component of claim 1, further comprising a secondinsulation layer which extends to the first insulation layer and isarranged at the second surface.
 6. The semiconductor component of claim5, wherein the second insulation layer comprises at least one of anoxide layer, a nitride layer, a spin-on glass, and an imide.
 7. Thesemiconductor component of claim 1, wherein the first insulation layercomprises at least one of an oxide layer, a nitride layer and alow-k-dielectric.
 8. The semiconductor component of claim 1, furthercomprising, in a vertical cross-section substantially orthogonal to thefirst surface, two insulation trenches extending between the firstsurface and the second surface, wherein the first insulation layer isformed on adjacent sidewalls of the two insulation trenches.
 9. Thesemiconductor component of claim 8, wherein the two insulation trenchesinclude an electrically conductive filling material.
 10. Thesemiconductor component of claim 1, further comprising at least one of adoped contact portion of the monocrystalline semiconductor region formedat the first surface, a doped contact portion of the monocrystallinesemiconductor region formed at the second surface, and a doped portionof the monocrystalline semiconductor region formed at the firstinsulation layer.
 11. The semiconductor component of claim 1, furthercomprising a contact trench in the via region which is at leastpartially filled with an electrically conductive material extending tothe second surface.
 12. The semiconductor component of claim 11, whereina third insulation layer is formed along a sidewall of the contacttrench.
 13. The semiconductor component of claim 1, wherein the firstinsulation layer extends between the first surface and the secondsurface.
 14. A semiconductor component, comprising: a semiconductor bodywith a first surface and a second surface; a via region arranged in thesemiconductor body and surrounded by a first insulation layer; a firstcontact electrode formed on the first surface; and a second contactelectrode on the second surface, wherein the semiconductor bodycomprises a monocrystalline semiconductor region arranged in the viaregion, enclosed by the first insulation layer, and extending betweenthe first contact electrode and the second contact electrode.
 15. Thesemiconductor component of claim 14, wherein the semiconductor componentis implemented as a MOS transistor and further comprises at least oneof: a gate electrode arranged next to the first surface and electricallyconnected to the first contact electrode; a source region arranged belowthe first surface; a source electrode electrically connected to thesource region, electrically insulated from the gate electrode, andarranged at least partially above the first surface; and a drainelectrode electrically insulated from the second contact electrode onthe second surface.
 16. The semiconductor component of claim 14, whereinthe first insulation layer is formed at a sidewall of a trench extendingbetween the first surface and the second surface.
 17. The semiconductorcomponent of claim 14, wherein the first insulation layer surrounds thevia region such that the via region has a rectangular or ellipsoidalgeometry in a horizontal plane parallel to the first surface of thesemiconductor body.
 18. The semiconductor component of claim 14, furthercomprising a second insulation layer which extends to the firstinsulation layer and is arranged at the second surface.
 19. Thesemiconductor component of claim 18, wherein the second insulation layercomprises at least one of an oxide layer, a nitride layer, a spin-onglass, and an imide.
 20. The semiconductor component of claim 14,wherein the first insulation layer comprises at least one of an oxidelayer, a nitride layer and a low-k-dielectric.